MATHEMATICAL MODELING OF ION IMPLANTATION PROCESSES INTO A GaAs(001) SINGLE CRYSTAL TO INCREASE THE EFFICIENCY OF SOLAR CELLS
DOI:
https://doi.org/10.55640/Keywords:
p-n transition, light losses, reflex ion coefficient, an electron-hole, diffusions length, ionic implantation, target orientation, introduction coefficient, the semi channel, focusing.Abstract
On purpose increase efficiency of solar elements it has been investigated process of ionic implantation influencing the big number of the interconnected coefficients, most important of which is target orientation, a grade, initial energy and a corner of falling of primary particles.
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References
1.Chopra K. Thin-film solar elements / К. Chopra,; Moskva, 1986.
2.Resources and efficiency of use of renewed energy sources / P.P. Bezrukix. – Sankt-Peterburg: Nauka, 2002.
3.Physics of a firm body: the Manual / I.K. Vereofgin. / Moskva, 2001.
4.Bahadyrhanov M. S, Marovtsev A.S., Tachilins S.A., Research methods of solar elements, Toshkent, 2009.
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